Stress Engineering in (100) and (110) nMOSFETs

摘要：

The physical mechanisms of electron mobility (μe) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110).From full band calculations, uniaxial-stress-induced split of conduction band edge (△Ec) and effective mass change (△m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (100) nMOSFETs is warped due to uniaxial <110>stress, resulting in lighter mT of 2-fold valleys parallel to the stress.By using calculated △EC and △m*, experimental μe, enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110>stress for (100) and (110) nMOSFETs. The limits of μe, enhancement are also discussed.

作者: Ken Uchida Masurai Saitoh

作者单位: Department of Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-12, O-okayama, Meguro-ku Toshiba Corporation

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 109-112

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）