Influence of surface orientation on electrical characteristics in MOSFETs with slightly tilted off-azis channel
Si surface properties and electrical characteristics in n-and p-MOSFETs with 2 -6 degree tilted off-axis (110) channel were reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. The gate leakage current and 1/f noise in (110) samples were also sensitive to off-axis angle.
Hisayo S.Momose
The Center for Semiconductor Research & Development Toshiba Corporation, Yokohama, Japan
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
126-129
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）