A Theoretical Study of Electrostatic Properties of <100> Uniazially Strained Silicon n-Channel MOSFET

摘要：

In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <100>uniaxially strainedn-MOS structure is presented based on finite element method. The solution is developed using FEMLAB considering wave function penetration effect into gate oxide.Significant change occurs in the eigen energies and the electron occupancies, intrinsic carrier concentration, inversion layer penetration and gate capacitance because of <100>uniaxial tensile stress. The consequences of these changes due to strain are explained.

作者: Md.Manzur Rahman

作者单位: Bangladesh University of Engineering and Technology Bangladesh

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 142-145

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）