Dopant-Segregated Source/Drain Technology for High-Performance CMOS

摘要：

Schottky barrier MOSFETs (SBTs) have attracted much attention as a candidate for achieving high-performance in future ULSIs. Their potential advantages are low electrode resistance, short channel effect immunity and high carrier injection velocity,and many more. The major obstacle is however, to reduce the Schottky barrier height (φb,) in these devices (both n-and pMOSFETs) since large φb, severely limits the current drivability.

作者: Atsuhiro Kinoshita

作者单位: Advanced LSI Technology Laboratory, Toshiba Corporation 8, Shinsugita-Cho, Isogo-Ku, Yokohama, 235-8522, Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 150-152

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）