A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs): Principle,Physical Limits and Parameter Fluctuations

摘要：

P-type Schottky barrier nanowire transistors (p-SB-NWTs) are computational studied in this paper.We analyzed the working principle and physical limits on their performance in details. The impact of Schottky contact of SB-NWTs on the current drivability,gate control and RF performance are studied comparing with conventional silicon nanowire transistors (SNWTs). It is pointed out that the inferior performance of SB-NWTs can not be solved by changing the S/D or channel materials.On the other hand,small Vt,Ft and on-off ratio fluctuation caused by process variation on channel diameter are observed,which is an advantage of SB-NWTs.

作者: Liangliang Zhang Zhaoyi Kang Runsheng Wang Ru Huang

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,100871

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 157-160

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）