Impact Factors on the Performance of Schottky Barrier MOSFETs with Asymmetric Barrier Height at Source/Drain

摘要：

The performance of the n-channel Schottky barrier MOSFET with asymmetric barrier height at source/drain (A-SBFET) was numerically simulated. The impact factors on the performance are studied. The results suggest the on-state characteristics of the devices are mainly determined by the source-side barrier height (SBH). Increasing SBH or decreasing body thickness can optimize the sub-threshold slope,and decreasing SBH can enhance the on-state current.

作者: Du Xiong-Xiong Sun Lei Liu Xiao-Yan Han Ru-Qi

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 161-163

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）