REBULF technology for bulk silicon and SOI lateral high-voltage devices

摘要：

Reduced Bulk Field (REBULF) technology is used in the design of lateral power devices to improve breakdown voltage.Since this technology was firstly presented in 2006,this technology has gained widespread attention amongst researchers and has shown to offer good performance in a variety of application domains,especially in bulk silicon and SOI. This paper aims to offer a compendious and timely review of the technology and some work of our lab on the application of this technology in bulk silicon and SOI.

作者: Bo Zhang Jianbing Cheng Ming Qiao Zhaoji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 164-167

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）