A Fermi Level Controlled High Voltage Transistor Preventing Subthreshold Hump

摘要：

In High Voltage Transistor (HVT),device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations.Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper,we have presented the novel Fermi Level Controlled HVT (FCHVT) to simply eliminate hump effects.

关键词： Hump HV High Voltage STI FCHVT Boron Segregation

作者: Byoung-Chul Park Sung-Young Lee -Dong-Ryul Chang Kee-In Bang Sung-Jun Kim Sang-Bae Yi Eun-Seung Jung

作者单位: School of Semiconductor Engineering, Samsung Semiconductor Institute of Technology, Gyeonggi-Do, KOR School of Semiconductor Engineering, Samsung Semiconductor Institute of Technology, Gyeonggi-Do, KOR DDI PA Team, SYSTEM LSI Division Semiconductor Business,Samsung Electronics Co., San 24 Nongseo-Dong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 172-175

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）