Thick Field-ozide High-voltage PMOS in BCD Technology for PDP Scan Driver IC

摘要：

High-voltage PMOS(HV-PMOS) with field-oxide as gate dielectrics for scan driver chip of plasma display panels (PDP) is disclosed in the paper,which is based on the epitaxial Bipolar-CMOS-DMOS (BCD) process. The key considerations during the design are proposed here,and abundance simulation and process regulation is done on the structure and parameter optimization,by the testing on the HV-PMOS parameter and chip parameter,the results is favorable for 170V PDP scan driver chip,which contributes to the competitive cost efficiency.

作者: Xiao-Ming Li Yi-Qi Zhuang

作者单位: Institute of Microelectronics,Xidian University,Xian 710071,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 176-179

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）