Research on SiGeC power diodes with fast and soft recovery

摘要：

A novel type of p+(SiGeC)-n--n+diodes with ultra fast and ultra soft reverse recovery characteristics is presented. The improvement of the novel diodes is achieved by the combination of new device structure and new semiconductor material.Based on the introduction of ideal ohmic contact,the softness factor increases over four times,the reverse recovery time is over 60% short and the reverse peak current is reduced about 35%,while the blocking voltage is almost unchanged for the device with the optimized n-region doping concentration.Due to the addition of smaller-sized carbon atoms to p+(SiGe) layers,the dependence of device characteristics on critical thickness is reduced largely,which increases the device stability reduces process cost for further device process steps.

关键词： SiGeC softness factor critical thickness

作者: Jing Liu Yong Gao Yuan Yang

作者单位: Department of Electronic Engineering,Xian University of Technology,Xian 710048,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 180-183

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）