New Lateral IGBT on Partial Membrane

摘要：

A new SOI LIGBT structure with a combination of Uniform and Variation in Lateral Doping profiles on Partial Membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane,resulting in an enhanced breakdown voltage.Moreover,combining uniform and variation in lateral doping profiles achieves a low specific on-resistance. The breakdown voltage increases by one time and the specific on-resistance reduces by 31.5% in comparison with that of conventional SOI LIGBT structure. In contrast to CamSemi device,the maximal temperature decreases and specific on-resistance greatly reduces for UVLD PM SOI LIGBT with the increase of Lb.

关键词： SOI LIGBT High voltage Charge Breakdown voltage Specific on-resistance

作者: Lei Lei Xiaorong Luo Zhan Zhan Wei Zhang Bo Zhang Zhaoji Li

作者单位: State key Laboratory of Electronic Thin Films and Integrated devices University of Electronic Science and Technology of China Chengdu,Sichuan,P.R.China,610054

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 184-187

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）