Bulk Silicon CDMOS Technology for an Advanced PDP Data Drvier IC

摘要：

In this paper,the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed.Not only the on-state characteristics,but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect,Kirk effect issues are improved against the lst LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices.And by applying the 2nd LEDMOS to the new PDP Driver IC,we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one,but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.

关键词： PDP Data IC Bulk-Silicon LEDMOS

作者: Qian Qinsong Wu Hong Li Haisong Sun Weifeng

作者单位: National ASIC System Engineering Research Center,Southeast University,Nanjing,Jiangsu,210096,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 195-198

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）