The Multi-Emitter Si/SiGe HBT for Microwave Power Application

摘要：

The design of Si/SiGe HBT for high-frequency microwave power amplification was presented in this paper. The material profile structure of the device was designed.A comb liked structure with 6-fingered emitter was employed for the SiGe HBT. Then the device was fabricated by using the buried metal self-aligned double mesa process and high resistivity substrate in a 3μm manufacture process line. The tested results indicate that the Si/SiGe power HBT reaches the parameters of β=26,VBC≥10V,Icm≥180mA and fT≥3.2GHz.

作者: Wang Zi-xu Yang Dao-hong Zou De-shu Shi Chen Chen Jian-xin Yang Wei-ming

作者单位: School of Physics and Electronic Technology,Hubei University,the Key Lab on Ferroelectric & Piezoele Wuhan Xinxin Semiconductor Manufacturing corp.,Wuhan 430205,,PR.China Beijing Optoelectronics Technology Laboratory,Beijing University of Technology,Beijing 100022,P.R.Ch

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 203-206

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）