From Ultimate to Beyond NanoCMOS

摘要：

The microelectronics industry is facing historical challenges to down scale CMOS devices through the demand for low voltage,low power and high performance. The implementation of new materials and devices architectures will be necessary.HiK gate dielectric and metal gate are among the most strategic options to implement for power consumption and low supply voltage management.Multigate architectures increaseMOSFETs drivability,reduce power,and allow new memory devices opportunities to develop future applications.By introducing new materials(HiK,Ge,Ⅲ-V,Carbon based materials like diamond,graphene and CNTs,molecules,...),Si based CMOS will be scaled beyond the ITRS as the System-on-Chip Platform.

关键词： CMOSFETs Diamond Germanium Nanocrystals Flash Memories Silicon on insulator technology Strain Wafer bonding

作者: S.Deleonibus B.de Salvo T.Ernst O.Faynot C.Le Royer T.Poiroux M.Vinet

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 207-210

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）