The Influence of the Source/Drain-tie Length in a Novel Self-Aligned S/D tie SOI for Improving Self-heating

摘要：

A self-aligned novel S/D tie SOI device is presented for the first time in the field of silicon on insulator technology. The new device having thick-body and body-passway is demonstrated to improve the self-heating effect and decrease the parasitic source/drain resistance.When the source/drain-tie length is too small or too big,the negative differential conductance behavior can be observed. It can be achieved that the lattice temperature of the new device is reduced 32% when compared with the two conventional SOI devices.

作者: Jyi-TsongLin Shiang-Shi Kang Yi-Chuen Eng Yi-Ming Tseng Ying-Chieh Tasi Hung-Jen Tseng Bao-Tang Jheng Po-Hsieh Lin

作者单位: Dept.of Electrical Engineering,National Sun Yat-Sen University,Kaohsiung 80424,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 219-222

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）