High performance and highly stable ultra-thin ozynitride for CMOS applications
The device characteristics and manufacturability of ultra-thin oxynitnde have been systemically studied in this paper for CMOS applications.We have found that the transistor with plasma oxynitride gate dielectrics gives better pEET performance in terms of drive current,mobility,threshold voltage and leakage current as compared to the one with thermal oxynitride,For nFET,the performance for transistors with plasma oxynitride and thermal oxynitride are almost equivalent. The manufacturability of plasma oxynitride is also thoroughly investigated. This paper proposes pre-conditioning process in plasma nitridation process which can significantly reduce the wafer-to-wafer variation for nitrogen and oxygen dose in the ultra-thin gate dielectrics.
Wenjuan Zhu Joseph Shepard Wei He Asit Ray Paul Ronsheim Dominic Schepis Dan Mocuta Effendi Leobandung
IBM microelectronics,Route 52,Hopewell Junction,NY 12533,USA IBM microelectronics,Route 52,Hopewell Junction,NY 2533,USA
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
223-226
2008-10-20(万方平台首次上网日期,不代表论文的发表时间)