Misalignment Issue between the Si-body and the Gate of a 30nm bSPIFET

摘要：

To improve the bSPIFET,the SA-bSPIFET 1 which used self-aligned process had been proposed.However there are many characteristics of bSPIFET not yet be studied. This paper focuses on the misalignment of gate shift (GS) in a 30nm bSPIFET.Based on 2D simulation,the misalignment of GS will influence the electrical characteristics causing the degradation of the short channel behaviour and the stability of the device.

作者: Hung-Jen Tseng Jyi-Tsong Lin Yi-Chuen Eng Bao-Tang Jheng Yi-Ming Tseng Shiang-Shi Kang Ying-Chieh Tasi

作者单位: Dep.of Electric Engineering,National Sun Yat-Sen University (NSYSUEE)70 Lien-Hai Rd.Kaohsiung 804,Ta Dep.of Electric Engineering,National Sun Yat-Sen University(NSYSUEE)70 Lien-Hai Rd.Kaohsiung 804,Tai

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 227-230

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）