Fabrication of improved FD SOIMOSFETs for suppressing edge effect

摘要：

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect,that is,the leakage current called hump is generated in the subthreshold region.According to different reasons for generating the edge effect,rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

作者: Ningjuan wang Ning Li Zhongli Liu Fang Yu Guohua Li

作者单位: Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.R.China State Key Laboratories of Transducer Technology

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 231-234

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）