Nature of breakdown in ultrathin gate dielectrics

摘要：

Post-breakdown reliability forms an important aspect of ultrathin gate dielectric lifetime projection in state-of-the-art MOSFET. In particular,digital breakdown plays a predominant role in the early stage of the dielectric breakdown. In this paper,we review the importance of digital breakdown in SiON gate dielectrics of less than 2.5nm,the possible underlying mechanism(s) and its impact on the post-BD lifetime projection of a device operating at nominal voltages.

作者: K.L.Pey C.H.Tung V.L.Lo X.Li

作者单位: Microelectronic Center,School of Electrical and Electronic Engineering,Nanyang Technological Univers Institute of Microelectronics,11 Science Park Road,Singapore 117685,Republic of Singapore

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 239-242

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）