Low-Frequency Current Fluctuations in Post-Hard Breakdown Thin Silicon Ozide Films

摘要：

This paper focuses on the current fluctuation of post-hard breakdown thin silicon oxide films with thickness ranging from 3 nm to 5 nm.We characterize the post-degraded structure of silicon oxide films by analyzing current fluctuation spectra after hard breakdown.

作者: Yasuhisa Omura

作者单位: ORDIST,Grad.School of Sci.& Eng,Kansai University,Suita,O saka 564-8680,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 243-246

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）