Defect Current and Defect Band Conduction of Ultrathin Ozides after Degradation and Breakdown

摘要：

Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band structure model. The degradation and breakdown of SiO2 can be modeled as a one dimensional linear chain of N identicaldefects with a effective Bohr radius ad separated by a distance R between electrodes. The degradation occurs when the defect distance ratio (ρ=R/ad) local reachesa transition value of about 8 and defect potential barrier height (φDB) approaches 1.1eV Stress-induced leakagecurrent (SILC) occurs,if ρ≥8 or q φDB=1.1 eV; softbreakdown (SBD) occurs,if 0.27eV≤qφDB < 1.1eV or 3.8≤p<8; and hard breakdown (HBD) occurs when qφDB =0 or ρ=3.4. The huge defect currentdifferences between SILC,SBD,and HBD are solely due to different defect distance.

作者: Mingzhen Xu Changhua Tan

作者单位: Institute of Microelectronics,Peking University,Beijing,100871,PR China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 247-249

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）