Fast Method to Identify the Root Cause for ILD Vbd Fail

摘要：

At the process development stage,the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed.Such non-uniformity may be induced either by interface-mode or by CD-mode. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.

作者: Z.H.Gan Y.J.Wu K.Zheng R.Guo C.C.Liao

作者单位: Logic Technology Development,Semiconductor Manufacturing International Corporatioa Shanghai 201203,PR.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 254-257

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）