Compact Modeling of Multiple-Gate MOSFETs

摘要：

This paper reviews recent development on compact modeling of multiple-gate MOSFETs.First,a core model based on the analytic potential solutions for the highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs has been presented.With the addition of quantum,short-channel effects,and capacitance formulations,the core model for DG MOSFETs has been expanded into a full-blown compact model which has subsequently been calibrated and validated by FinFET hardware.For application to other types of experimental multiple-gate MOSFETs developed,the DG and SG MOSFET models have been generalized to other less symmetric structures,including quadruple-gate,triple-gate,Ω-gate,and ∏-gate devices.

作者: Yuan Taur Jooyoung Song Bo Yu

作者单位: The Department of Electrical and Computer Engineering,University of California -San Diego,La Jolla,C The Department of Electrical and Computer Engineering,University of alifornia -San Diego,La Jolla,CA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 258-261

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）