Unified Regional Modeling Approach to Emerging Multiple-Gate/Nanowire MOSFETs

摘要：

This paper reviews the basic governing equations for a double-gate/gate-all-around (DG/GAA) MOSFET in a generic and unified description.Starting from generic Poisson solution and input voltage equation,a paradigm shift with ground-reference and source/drain by label is proposed,which is essential in formulating equations for DG FinFETs without body contact. The unified regional modeling (URM) approach is used for unified surface-potential solutions,and is applied to demonstrate Gummel symmetry in doped DG with partial to full-depletion operations.

作者: Xing Zhou Guan Huei See Guojun Zhu Shihuan Lin Chengqing Wei Junbin Zhang

作者单位: School of Electrical & Electronic Engineering,Nanyang Technological University,Singapore 639798

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 262-267

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）