A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs

A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFETs characteristics by the 3-D numerical simulation.
non-classical MOSFET surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approzimation
Jin He Yan Song Feng Liu FeilongLiu Lining Zhang Jian Zhang Xing Zhang
TSRC,EECS,Peking University,Beijing 100871,P.R.China Peking University Shenzhen Graduate School,Shen TSRC,EECS,Peking University,Beijing 100871,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
268-271
2008-10-20(万方平台首次上网日期,不代表论文的发表时间)