A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs

摘要：

A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFETs characteristics by the 3-D numerical simulation.

关键词： non-classical MOSFET surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approzimation

作者: Jin He Yan Song Feng Liu FeilongLiu Lining Zhang Jian Zhang Xing Zhang

作者单位: TSRC,EECS,Peking University,Beijing 100871,P.R.China Peking University Shenzhen Graduate School,Shen TSRC,EECS,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 268-271

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）