HiSIM-HV: A Compact Model for Simulation of High-Voltage-MOSFET Circuits

摘要：

The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs 1,2 and features a consistent potential description across MOSFET channel and drift region.Symmetric and asymmetric device types are covered for up to several 100V switching capability.Accurate scaling properties for channel and drift-region length as well as channel width are also provided.

作者: H.J.Mattausch M.Miura-Mattausch T.Kajiwara M.Yokomichi T.Sakuda Y.Oritsuki M.Miyake N.Sadachika H.Kikuchihara U.Feldmann

作者单位: Grad.School of Advanced Sciences of Matter,Hiroshima University,739-8530,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 276-279

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）