Eztraction of Speculative SOI MOSFET Models Using Self-Heating-Free Targets

摘要：

Speculative SPICE models (also referred to as evaluation-level or guess models),which are extracted based on projected device electrical characteristics (called targets) rather than actual measurement data,are required to support concurrent IC designs. The self-heating effect in silicon-on-insulator (SOI) technologies presents additional challenges in obtaining quality speculative SOI MOSFET models.A novel shift-and-ratio technique is developed to generate self-heating free device targets from raw targets provided only at room temperature,and a corresponding speculative model extraction methodology is proposed. The shifl-and-ratio technique is validated by using silicon data of 6Snm partially-depleted (PD) SOI technologies. The adequacy and self-consistency of the speculative model extraction methodology is demonstrated in field testing where a large number of 65nm and 45nm PD SOI speculative models are extracted.Availability of self-heating free targets proves to be critical not only for improved speculative model extraction efficiency,but also for model quality in general by ensuring physical and reasonable temperature dependences in the resulting speculative models.

关键词： Compact modeling self-heating SOI

作者: Qiang Chen Priyanka Chiney Sushant Suryagandh Ali B.Icel Zhi-Yuan Wu Tran Ly Mayank Gupta Vineet Wason Jung-Suk Goo Ciby Thuruthiyil Martin Radwin Niraj Subba

作者单位: Advanced Micro Devices,Inc.One AMD Place,P.O.Box 3453,MS 79,Sunnyvale CA 94088,USA Advanced Micro Devices,Inc.One AMD Place,P.O.Box 3453,MS 79,Sunnyvale CA 4088,USA Advanced Micro Devices,Inc.One AMD lace,P.O.Box 3453,MS 79,Sunnyvale CA 94088,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 284-287

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）