An Analytical Model for Carrier Recombination and Generation Lifetimes Measurement in SOI MOSFETs

摘要：

In this paper,an analytical model is proposed to study the carrier recombination-generation (R-G) processes in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The Correlations of the carrier lifetimes and the external perturbation rates have been investigated to examine the applicability and accuracy of techniques for carrier lifetimes measurement in device characterization and modeling. The credibility of the proposed model is supported by the consistent experimental and simulation results.

作者: Gang Zhang Won Jong Yoo

作者单位: SKKU Advanced Institute of Nano-Technology,Sungkyunkwan University,300 Cheoncheon-dong,Jangan-gu,Suwon,Gveongg1-do,Korea.440-746

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 297-300

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）