Off-State Leakage Current Modeling in Low-Power/High-Performance Partially-Depleted (PD) Floating-Body (FB) SOI MOSFETs

摘要：

Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage dependence.Modeling accuracy of the off-state leakage current is highly dependent on modeling of parasitic currents,although their direct contribution to the leakage may be negligible in lower-powerhigh-performance technologies. The underlying physical mechanism,i.e.,the FB effect,is also shown to be responsible for observed varying drain-induced-barrier-lowering (DIBL) or highly non-linear dependence of the threshold voltage on drain voltage.While characterization of parasitic currents may present a challenge because of unconventional geometry dependences,the off-state leakage current and Us fitting accuracy may be used as an indirect,effective figure of merit.

关键词： Drain-induced barrier lowering (DIBL) Floating-body (FB) effect Leakage current Partially-depleted (PD) Silicon-on-insulator (SOI) Threshold voltage

作者: Qiang Chen Jung-Suk Goo Tran Ly Karthik Chandrasekaran Zhi-Yuan Wu Ciby Thuruthiyil Ali B.Icel

作者单位: Advanced Micro Devices,Inc.One AMD Place,P.O.Box 3453,MS 79,Sunnyvale CA 94088,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 301-304

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）