Balanced Truncation on Empirical Gramians for Model-Order-Reduction of Non-Quasi-Static Effects in MOSFETs

摘要：

In this paper,an empirical truncated balanced realization (TBR) approach is introduced to reduce the model order of Non-Quasi-Static (NQS) Effects in MOSFETs. In the PSP model (an industrial standard in compact modeling of MOSFETs),a simple spline-collocation (SC) approach is most commonly used to compute NQS. The SC technique,however,suffers from relatively high computing effort. To the best of our knowledge,this work is the first application of the TBR technique to reduce model order for the NQS effects.We compared the accuracy and efficiency of this new technique against the SC results.Our results show that TBR requires significantly less computing efforts due to smaller number of discretization points along the MOS channel.

作者: Shijing Yap Yangdong Deng Zhiping Yu

作者单位: Institute of Microelectronics,Tsinghua University,Beijing 100084,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 309-312

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）