会议专题

An Efficient Compact Model for LDMOS with Self-Heating Effects

A charge based compact model with self-heating effects has been developed for LDMOS transistors.Both the channel and drift regions in LDMOS are modeled without adding an internal drain node.An efficient scheme for including self-heating effects is implemented in the model,which requires no thermal network.A comparison with measured data from an LDMOS shows that the model has excellent accuracy in calculated I-V characteristics.Moreover,all model expressions and their derivatives are continuous,thus facilitating the convergence in circuit simulation.

LDMOS self-heating compact model

Dongxu Yang Li Zhang Yan Wang Zhiping Yu

Institute of Microelectronics,Tsinghua University,Beijing 100084,China,Masanori Shimasue and Hitoshi Aoki,MoDeCH Inc.,Tokyo,Japan

国际会议

9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

北京

英文

313-316

2008-10-20(万方平台首次上网日期,不代表论文的发表时间)