An Efficient Compact Model for LDMOS with Self-Heating Effects
A charge based compact model with self-heating effects has been developed for LDMOS transistors.Both the channel and drift regions in LDMOS are modeled without adding an internal drain node.An efficient scheme for including self-heating effects is implemented in the model,which requires no thermal network.A comparison with measured data from an LDMOS shows that the model has excellent accuracy in calculated I-V characteristics.Moreover,all model expressions and their derivatives are continuous,thus facilitating the convergence in circuit simulation.
LDMOS self-heating compact model
Dongxu Yang Li Zhang Yan Wang Zhiping Yu
Institute of Microelectronics,Tsinghua University,Beijing 100084,China,Masanori Shimasue and Hitoshi Aoki,MoDeCH Inc.,Tokyo,Japan
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
313-316
2008-10-20(万方平台首次上网日期,不代表论文的发表时间)