Modeling of the Turn-On Characteristics of Poly-silicon Thin-Film Transistors with Considering Kink Effect

摘要：

A semi-empirical analytical model of the turn-on characteristics of poly-silicon thin-film transistor (TFT) with considering kink effect is presented based on the physical characteristics of poly-silicon thin film.With reference to the approach of modeling the kink effect in SOI devices and considering the grain boundaries in poly-silicon thin film,the dc characteristics of poly-silicon TFT are simulated,including drain induced grain boundary lowering (DIGBL) effect,impact ionization,floating body effect,parasitic bipolar transistor (PBT) effect,etc. The simulation results show a good agreement with the experimental data.

作者: Bin Li Ting Chen Xue-Ren Zheng

作者单位: Institute of Microelectronics,School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 317-320

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）