Nanoelectronic Device Simulation Using Eztended H(u)ckel Theory (EHT) and NEGF

摘要：

Nanoelectronic devices can be,in one way,characterized by the large surface/volume ratio in addition to the central role of quantum effects. This paper describes a computationally efficient way of obtaining the band-structure of the intrinsic device including the interface with metal contacts using the extended Huckel theory (EHT).Carrier quantum transport is then computed by NEGF (non-equilibrium Greens function).GNRFETs (graphene-nanoribbon FET) are simulated using this approach as an application example.

作者: Zhiping Yu Ximeng Guan Ming Zhang Qiushi Ran

作者单位: Institute of Microelectronics,Tsinghua University,Beijing 100084,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 353-356

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）