Harmonic Distortion in MOSFETs Calculated by Successive Integration of the Transfer Characteristics

摘要：

The harmonic distortion of experimental n-MOSFETs with different channel lengths has been studied from their measured transfer characteristics,using a recently proposed alternative mathematical procedure called Full Successive Integrals Method (FSIM). The FSIM allows accurate calculation of the Fourier Coefficients (Hk) and hence traditional figures of merit such as THD,HDk,IP2 and IP3 can be readily determined. The FSIM circumvents the use of AC analysis (avoids Fourier analysis),and additionally acts as a very efficient filter for the noise which is inherently present in measurement data.Furthermore,the FSIM can successfully determine the harmonic distortion associated with any amplitude of the input signal.

作者: Ramon Salazar Adelmo Ortiz-Conde Francisco J.Garcia-Sanchez

作者单位: Solid State Electronics Laboratory,Simon Bolivar University,Apartado Postal 89000,Caracas 1080-A,Venezuela

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 369-372

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）