Simulation of Time-Dependent Transport in Nanoscaled Devices

摘要：

A method for simulating time-dependent transport in nanoscaled devices is presented. The method is based on solving time-dependent Schrodinger equation using the method of finite difference time domain (FDTD).Poisson equation is solved self-consistently with Schrddinger equation. This method is demonstrated by simulations of time-dependent transport in a nanowire and gate-around carbon nanotube field-effect transistor (CNTFET). Transient effects,e.g.,finite rising time,are explored in these devices.

作者: Zhidong Chen Jinyu Zhang Zhiping Yu

作者单位: Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 373-376

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）