Simulation of Magnetotransport in Nanoscale Devices

摘要：

The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs.Magnetotransport in a silicon n+nn+device is simulated and a strong impact of the maximum number of spherical harmonics on the simulation result is found.

作者: Sung-Min Hong Christoph Jungemann

作者单位: EIT4,Bundeswehr University,85577 Neubiberg,Germany

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 377-380

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）