GaAs-GaP Core-Shell Nanowire Transistors: A Computational Study

摘要：

We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k·p calculation of the valence band structures including the strain effect.We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as the shell thickness increases.We analyze its impact on the transistor performance,and our simulation results indicate that in order to achieve a good ON/OFF current ratio the epitaxial shell should be grown thin enough.

作者: Yuhui He Yuning Zhao Chun Fan Xiaoyan Liu Jinfeng Kang Ruqi Han

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,P.R.China Computer Center,Peking University,Beijing 100871,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 385-388

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）