Statistical Variations in 32nm Thin-Body SOI devices and SRAM cells

摘要：

Based on 3D statistical device simulation,the impacts of key statistical variability (SV) sources (in both individual and combined forms) on device characteristics are studied in detail for a 32nm thin-body SOI technology. The corresponding impacts on SRAM cell stability are presented as well. The simulation results indicate that thin body architectures are not only resistant to random discreet dopant induced variation,but also less sensitive to length edge roughness induced variation.

作者: B.Cheng S.Roy A.Brown C.Millar A.Asenov

作者单位: Dept.of Electronics & Electrical Engineering,University of Glasgow,Glasgow,G12 8LT,U.K

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 389-392

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）