Investigations on the Physical Understanding of Mobility in MOSFETs-from Drift-Diffusion to Quasi-Ballistic

摘要：

This paper provides scattering matrix method to analyze the transport property in nanoscale MOSFETs.A unified mobility model with analytical expression is presented,which can cover the whole range from drift-diffusion to quasi-ballistic region. The inherent mobility reduction in MOSFETs with the shrinking of the channel length is extensively investigated from the theory and well agrees with the experiments,but the low-field free path is nearly constant. It is found that the reduction of measured mobility in nano-MOSFETs is only an apparent phenomenon. The relationship between the low-field mean free path λo and the driving current in nano-MOSFETs is discussed. The results indicate it is the λo instead of apparent mobility that determine the transport characteristics in nano-devices.

作者: Hongwei Liu Runsheng Wang Ru Huang Xing Zhang

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 400-403

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）