Automated design of random dopant fluctuation resistant MOSFETs

摘要：

An optimization technique is presented for the design of fluctuation resistant MOSFETs. This technique allows the computation of the doping profiles that minimize the standard deviation of fluctuations of transistor parameters induced by random dopant fluctuations (RDF).Constraints are taken into consideration by using the Lagrange multipliers technique. It is shown that by carefully designing the doping profiles,the random dopant-induced fluctuations of threshold voltage can be suppressed up to 50% in MOSFETs with channel lengths of 25 nm.Analytical equations are presented for the optimum doping profiles that minimize the random dopant-induced fluctuations of the threshold voltage in long-channel MOSFETs. It is shown that,in both long-channel and short-channel devices,the size of the undoped region should be at least (1/4) of the width of the depletion region in order to suppress efficiently the random dopant-induced fluctuations.

作者: Petru Andrei

作者单位: Department of Electrical and Computer Engineering,Florida State University,Tallahassee,FL 32310,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 404-407

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）