3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

摘要：

Infra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations such as line edge roughness (LER) and oxide thickness fluctuations (OTF).A full 3-D statistical simulation is presented to investigate the impact of geometrical variations on the FinFETs performance. In this work,roughness is introduced by a Fourier analysis of the power spectrum of Gaussian autocorrelation function. The influence of different geometrical variation sources Is compared and summarized. The results shows that FinFETs performance is most sensitive to the fin LER,which causes a remarkable shift and fluctuations in threshold voltage,drain induced barrier lower effect (DIBL) and leakage current The impact of gate LER follows that of fin LER. The simulation also suggests quantum confinement effect accounts for the aggressive fluctuations due to fin LER.

作者: Shimeng Yu Yuning Zhao Yuncheng Song Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 408-411

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）