On Integration-based Methods for MOSFET Model Parameter Eztraction

摘要：

This article reviews integration-based model-parameter extraction methods for MOSFETs. It comprises three different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two other methods are included for extraction under saturation conditions. An integration-based method to evaluate the location of a maximum value of a given function is also included. Finally,the possibility of evaluating distortion is briefly introduced.

作者: Adelmo Ortiz-Conde Francisco J.Garcia Sanchez Ramon Salazar

作者单位: Solid State Electronics Laboratory,Universidad Simon Bolivar,Apartado Postal 89000,Caracas 1080-A,Venezuela

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 428-431

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）