The Development of Integration-based Methods to Eztract Parameters of Two-Terminal Device Models

摘要：

We present a historic overview of the initial motivating ideas,original foundations,and subsequent development,of integration-based methods which are currently used to extract semiconductor device model parameters,as well as to assess devices and circuits non-linearity. To illustrate these methods capabilities,in this paper we review sample applications specifically focusing on two-terminal devices,such as non-ideal junctions,illuminated solar cells,and post-breakdown conduction through thin oxides. Additional applications of these integration-based extraction methods,pertaining to MOSFET models and harmonic distortion evaluation,are presented elsewhere in this conference.

作者: Francisco J.Garcia-Sanchez Adelmo Ortiz-Conde Giovanni De Mercato

作者单位: Solid State Electronics Laboratory,Simon Bolivar University,Apartado Postal 89000,Caracas 1080-A,Venezuela

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 432-435

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）