Advanced Spice Modeling for 65nm CMOS Technology

摘要：

The paper presents a comprehensive study of Spice modeling for some key physical effects observed in a 65nm CMOS process. STI-induced stress effect,well proximity effect,as well as HCI and NBTI reliability effects,which can not be neglected for technologies beyond 90nm and must be properly modeled for accurate circuit simulations,are discussed in this study.

作者: Lianfeng Yang Meng Cui James Ma Jia He Wei Wang Waisum Wong

作者单位: ProPlus Design Solutions,Inc.,2860 Zanker Road,Suite 204,San Jose,CA 95134,USA Semiconductor Manufacturing International Corporation,18 Zhang Jiang Rd.,Shanghai 201203,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 436-439

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）