Critical Current (ICRIT) Based SPICE Model Eztraction for SRAM Cell

摘要：

Critical currents (ICRIt) extracted from the N-curves of a 6-T SRAM bit cell have been shown in recent research to be important and effective figures of merit for the cells stability and write-ability. SPICE models of cell transistors,therefore,not only need to fit closely to individual transistors I-V characteristics,but also faithfully reproduce loins behavior of the cell as a whole. A branch current analysis is performed to reveal individual transistors impact on ICRIT and their key bias regions. Based on the insight from the analysis,an efficient SPICE model extraction flow is proposed that enables decoupled fine tuning of the pass-gate,pull-down,and pull-up transistor models to achieve satisfactory fit to IcrItS without model extraction iterations.

关键词： ICRIt N-Curve Parameter eztraction SNM SRAM Stability Write-ability

作者: Qiang Chen All B.Icel Sriram Balasubramanian Ciby Thuruthiyil Mayank Gupta Vineet Wason Niraj Subba Jung-Suk Goo Priyanka Chiney Srinath Krishnan

作者单位: Advanced Micro Devices,Inc.One AMD Place,P.O.Box 3453,MS 79,Sunnyvale CA 94088,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 448-451

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）