A Simple Procedure to Determine Source/Drain Series Resistance and Effective Channel Length for Advanced MOSFETs

摘要：

A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23,0.2,and 0.185μm. The parameters extracted with this procedure have been validated by comparing calculated and measured I-V characteristics.

作者: Yang-Hua Chang Ying-Chieh Cheng Ching-Sung Ho

作者单位: Department of Electronic Engineering,National Yunlin University of Science and Technology,Tou-Liu,Yu Powerchip Semiconductor Corp.,300 Taiwan,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 452-455

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）