Simulation of Charge Trapping Memory with Novel Structures

摘要：

A self-consistent method is employed to refresh thebarrier shape by solving Poisson equation during simulating on program/erase/retention (P/E/R) operations of CTM devices. The novel CTM structures with band engineering and hemi-cylindrical (HC) TANOS with different · gate stack shapes of 0 changing from π/12 to 5π/12 are simulated in order to evaluate the effect of structures on the performance of CTM.

作者: X.Y.Liu Y.C.Song Gang Du R.Q Han Z.L.Xia D.Kim K-H Lee

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Samsung Electronics Co.Ltd

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 468-471

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）