Error Correction and Parasitics De-embedding for On-Wafer Transistor S-Parameter Measurements Using 4-Port Techniques

摘要：

This paper presents the fundamentals and recent progresses of 4-port based error correction and parasitics de-embedding techniques we developed for high frequency transistor measurements. RF CMOS data from 2 to 110 GHz will be shown to illustrate various techniques.

作者: Guofu Niu Xiaoyun Wei

作者单位: Alabama Microelectronics Science and Technology Center Electrical and Computer Engineering Department 200 Broun Hall,Auburn University,Auburn,AL 36849 USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 472-475

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）