Thermal Noise Performance in Recent CMOS Technologies

摘要：

This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-100 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.

作者: Chih-Hung Chen Bigchoug Hung Sheng-Yi Huang Jin-Shyong Jan Victor Liang Chune-Sin.Yeh

作者单位: Electrical and Computer Engineering,McMaster University,Hamilton,Ontario,Canada United Microelectronics Corporation,Hsin-Chu,Taiwan,R.O.C United Microelectronics Corporation Group,Sunnyvale,CA,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 476-479

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）