Impact of Gate Misalignment on the Performance of Dopant-Segregated Schottky Barrier MOSFETs

摘要：

The impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFET (DS SBTs) and on the carrier transport is investigated by Monte Carlo method. The simulation results show that gate misalignment with dopant-segregated structure (DSS) has less significant impact on drain current than that without DSS. The influence of gate misalignment with DSS becomes notable only when drain voltage is high enough,while gate misalignment without DSS affects drain current always no matter how much drain voltage is. For carrier transport,our results demonstrate that maximal velocity at source side of DS SBTs without gate misalignment shows saturation,while saturation doesnt exist in DS SBTs with gate misalignment.

作者: Lang Zeng Xiao Yan Liu Gang Du Jin Feng Kang Ru Qi Han

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University,100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 504-507

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）